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Plastic Infrared Emitting Diode
OP165, OP166 Series
Absolute Maximum Ratings (T A =25°C unless otherwise noted)
Storage and Operating Temperature Range
Reverse Voltage
Continuous Forward Current
Peak Forward Current (1 μs pulse width, 300 pps)
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron]
Power Dissipation
Electrical Characteristics (T A = 25 ° C unless otherwise noted)
-40 o C to +100 o C
2.0 V
50 mA
3.0 A
260° C
100 mW (1)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Input Diode
E E (APT)
Apertured Radiant Incidence
OP165A, OP166A
1.95
-
-
mW/cm 2 I F = 20 mA (2)
P O
V F
I R
λ P
B
Radiant Power Output
OP165W, OP166W
Forward Voltage
Reverse Current
Wavelength at Peak Emission
Spectral Bandwidth between Half Power
Points
0.50
-
-
-
-
-
-
-
935
50
-
1.60
100
-
-
mW
V
μA
nm
nm
I F = 20 mA
I F = 20 mA
V R = 2 V
I F = 10 mA
I F = 10 mA
Spectral Shift with Temperature
?λ P / ? T
OP165, OP166 (A, B, C, D)
OP165W, OP166W
-
-
-
±0.30
-
-
nm/°C
I F = Constant
Emission Angle at Half Power Points
θ HP
OP165, OP166 (A, B, C, D)
OP165W, OP166W
-
-
18
90
-
-
Degree I F = 20 mA
t r
t f
Output Rise Time
Output Fall Time
-
-
1000
500
-
-
ns
ns
I F(PK) =100 mA, PW=10 μs, D.C.=10.0%
Notes:
1. Derate linearly 1.33 mW/°C above 25°C
2. E E(APT) is a measurement of the average apertured rediant incidence
ipon a sensing area 0.081” (2.06 mm) in diameter, perpendicular to
and centered on the mechanical axis of the lens, and 0.590” (14.99
mm) from the measurement surface. E E(APT) is not necessarily
uniform within the measured areas.
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue B 05/2011
Page 3 of 4
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相关代理商/技术参数
OP166Z 制造商:未知厂家 制造商全称:未知厂家 功能描述:Analog IC
OP168F 制造商:OPTEK 制造商全称:OPTEK 功能描述:Plastic Infrared Emitting Diode
OP168FA 功能描述:红外发射源 Infrared 935nm RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk
OP168FB 功能描述:红外发射源 Infrared 935nm RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk
OP168FC 功能描述:红外发射源 Infrared 935nm RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk
OP169A 功能描述:红外发射源 Infrared 935nm RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk
OP169B 功能描述:红外发射源 Infrared 935nm RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk
OP169C 功能描述:红外发射源 Infrared 935nm RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk